NTMFS4847N
0.040
0.008
0.035
0.030
0.025
0.020
0.015
0.010
0.005
I D = 30 A
T J = 25 ° C
0.007
0.006
0.005
0.004
0.003
T J = 25 ° C
V GS = 4.5 V
V GS = 11.5 V
0
2
3
4
5
6
7
8
9
10
11
0.002
30
40
50
60
70
80
90
100
110 120
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
I D = 30 A
V GS = 10 V
10,000
V GS = 0 V
1.4
1.2
1.0
0.8
1000
T J = 150 ° C
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
100
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
3200
2800
2400
C iss
T J = 25 ° C
12
11
10
9
QT
V GS
2000
1600
8
7
6
1200
800
C oss
5
4
3
Q gs
Q gd
400
0
0
C rss
4
8
12
16
20
24
28
32
2
1
0
0
4
8
12
16
20
24
28
32
I D = 30 A
T J = 25 ° C
36 40
44
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
http://onsemi.com
4
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage vs. Total Charge
相关PDF资料
NTMFS4849NT3G MOSFET N-CH 30V 10.2A SO-8FL
NTMFS4851NT3G MOSFET N-CH 30V 9.5A SO-8FL
NTMFS4852NT1G MOSFET N-CH 30V 16A SO8 FL
NTMFS4854NST1G MOSFET N-CH 25V 15.2A SO-8FL
NTMFS4897NFT1G MOSFET N-CH 30V SO-8FL
NTMFS4899NFT3G MOSFET N-CH 30V 10.4A SO-8FL
NTMFS4921NT1G MOSFET N-CH 30V 8.8A SO8 FL
NTMFS4922NET1G MOSFET N-CH 30V 147A SO8-FL
相关代理商/技术参数
NTMFS4847NT1G 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4847NT3G 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4849N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL
NTMFS4849N_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL
NTMFS4849NT1G 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4849NT3G 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4851N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL
NTMFS4851NT1G 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube